? semiconductor components industries, llc, 2010 july, 2010 ? rev. 7 1 publication order number: mbrd620ct/d mbrd620ct, mbrd630ct, mbrd640ct, mbrd650ct, mbrd660ct mbrd620ct, mbrd640ct and mbrd660ct are preferred devices switchmode power rectifiers dpak ? 3 surface mount package these state ? of ? the ? art devices are designed for use in switching power supplies, inverters and as free wheeling diodes. features ? extremely fast switching ? extremely low forward drop ? platinum barrier with avalanche guardrings ? pb ? free packages are available mechanical characteristics: ? case: epoxy, molded ? weight: 0.4 gram (approximately) ? finish: all external surfaces corrosion resistant and terminal leads are readily solderable ? lead and mounting surface temperature for soldering purposes: 260 c max. for 10 seconds schottky barrier rectifiers 6.0 amperes, 20 ? 60 volts preferred devices are recommended choices for future use and best overall value. 1 3 4 ordering information see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. http://onsemi.com y = year ww = work week b6x0t = device code x = 2, 3, 4, 5, or 6 g = pb ? free package dpak case 369c marking diagram 1 2 3 4 yww b 6x0tg
mbrd620ct, mbrd630ct, mbrd640ct, mbrd650ct, mbrd660ct http://onsemi.com 2 maximum ratings rating symbol mbrd unit 620ct 630ct 640ct 650ct 660ct peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 20 30 40 50 60 v average rectified forward current per diode t c = 130 c (rated v r ) per device i f(av) 3 6 a peak repetitive forward current, t c = 130 c (rated v r , square wave, 20 khz) per diode i frm 6 a nonrepetitive peak surge current ? (surge applied at rated load conditions halfwave, single phase, 60 hz) i fsm 75 a peak repetitive reverse surge current (2 s, 1 khz) i rrm 1 a operating junction temperature (note 1) t j ? 65 to +175 c storage temperature t stg ? 65 to +175 c voltage rate of change (rated v r ) dv/dt 10,000 v/ s thermal characteristics per diode rating symbol value unit maximum thermal resistance, junction ? to ? case r jc 6 c/w maximum thermal resistance, junction ? to ? ambient (note 2) r ja 80 c/w electrical characteristics per diode maximum instantaneous forward voltage (note 3) i f = 3 amps, t c = 25 c i f = 3 amps, t c = 125 c i f = 6 amps, t c = 25 c i f = 6 amps, t c = 125 c v f 0.7 0.65 0.9 0.85 v maximum instantaneous reverse current (note 3) (rated dc voltage, t c = 25 c) (rated dc voltage, t c = 125 c) i r 0.1 15 ma 1. the heat generated must be less than the thermal conductivity from junction ? to ? ambient: dp d /dt j < 1/r ja . 2. rating applies when surface mounted on the minimum pad size recommended. 3. pulse test: pulse width = 300 s, duty cycle 2.0%.
mbrd620ct, mbrd630ct, mbrd640ct, mbrd650ct, mbrd660ct http://onsemi.com 3 ordering information device package shipping ? mbrd620ctt4 dpak 2500 tape & reel mbrd620ctt4g dpak (pb ? free) 2500 tape & reel mbrd630ctt4 dpak ? 3 2500 tape & reel mbrd630ctt4g dpak (pb ? free) 2500 tape & reel mbrd640ct dpak ? 3 75 units / rail mbrd640ctg dpak ? 3 (pb ? free) 75 units / rail mbrd640ctt4 dpak ? 3 2500 tape & reel mbrd640ctt4g dpak ? 3 (pb ? free) 2500 tape & reel mbrd650ct dpak ? 3 75 units / rail mbrd650ctg dpak (pb ? free) 75 units / rail mbrd650ctt4 dpak ? 3 2500 tape & reel mbrd650ctt4g dpak (pb ? free) 2500 tape & reel mbrd660ct dpak ? 3 75 units / rail mbrd660ctg dpak ? 3 (pb ? free) 75 units / rail mbrd660ctrl dpak ? 3 1800 tape & reel mbrd660ctrlg dpak ? 3 (pb ? free) 1800 tape & reel mbrd660ctt4 dpak ? 3 2500 tape & reel mbrd660ctt4g dpak ? 3 (pb ? free) 2500 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mbrd620ct, mbrd630ct, mbrd640ct, mbrd650ct, mbrd660ct http://onsemi.com 4 typical characteristics figure 1. typical forward voltage, per leg figure 2. typical reverse current,* per leg figure 3. average power dissipation, per leg 1.2 1.0 0 v f , instantaneous voltage (volts) 100 10 v r , reverse voltage (volts) 40 70 0 0.1 0.001 i f(av) , average forward current (amps) 1.0 0 10 8.0 6.0 4.0 2.0 0 2.0 i f , instantaneous forward current (amps) i p f(av) , average power dissipation (watts) 1.0 0.4 0.2 0.6 0.8 50 60 10 20 30 10 100 3.0 4.0 5.0 6.0 7.0 10 0.1 1.4 8.0 9.0 9.0 7.0 5.0 3.0 1.0 , reverse current (ma) r 1.0 0.01 t c = 25 c 150 c 125 c 75 c t j = 150 c i pk /i av = 20 sine wave square wave dc 10 5 t j = 150 c *the curves shown are typical for the highest voltage device in the voltage grouping. t ypical reverse current for lower voltage selections can be estimated from these curves if v r is sufficient below rated v r . 125 c 75 c 25 c 11 12 13 14 0.2 0.3 0.5 0.7 2.0 3.0 5.0 7.0 70 50 30 20
mbrd620ct, mbrd630ct, mbrd640ct, mbrd650ct, mbrd660ct http://onsemi.com 5 figure 4. current derating, case, per leg figure 5. current derating, ambient, per leg figure 6. typical capacitance, per leg 140 80 t c , case temperature ( c) 8.0 7.0 5.0 6.0 4.0 t a , ambient temperature ( c) 100 160 0 2.0 1.0 0.5 0 60 0 v r , reverse voltage (volts) 100 10 70 i f(av) , average forward current (amps) c, capacitance (pf) 3.0 2.0 1.0 110 90 100 120 130 150 160 120 140 20 40 60 80 1.5 2.5 3.0 10 20 30 40 50 0 3.5 4.0 i f(av) , average forward current (amps) 1 k t j = 25 c rated voltage applied t j = 150 c r jc = 6 c/w dc sine wave or square wave t j = 150 c v r = 25 v r ja = 80 c/w surface mounted on min. pad size recommended square wave or sine wave dc v r = 60 v
mbrd620ct, mbrd630ct, mbrd640ct, mbrd650ct, mbrd660ct http://onsemi.com 6 package dimensions dpak (single gauge) case 369c ? 01 issue d b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within dimensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw + ? on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. sc illc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems in tended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hol d scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding th e design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resa le in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 mbrd620ct/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loca l sales representative
|
